丝印：1S30N06L；Package：TO-262AA；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.94 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：350.22 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：188.99 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：80.85 Kbytes 页数：8 Pages

INTERSIL

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS

N-Channel 60 V (D-S) MOSFET

文件：1.29281 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Renesas

瑞萨

30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

Renesas

瑞萨