70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：284.4 Kbytes 页数：2 Pages

ISC

无锡固电

70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approach ing those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in

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瑞萨

70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：588.3 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.68 Kbytes 页数：2 Pages

ISC

无锡固电

70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs

文件：142.9 Kbytes 页数：16 Pages

INTERSIL

70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regul

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