GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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GOLD BOUNDED GERMANUM DIODE

NJS

新泽西半导体

ULTRAFAST RECTIFIER

Features • passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed surface mount power package • Low package inductance • Very low thermal resistance • Available as standard polarity (strap-to-anode, 1N6705) and rever

文件：57.95 Kbytes 页数：2 Pages

MICROSEMI

美高森美

ULTRAFAST RECTIFIER

Features • passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed surface mount power package • Low package inductance • Very low thermal resistance • Available as standard polarity (strap-to-anode, 1N6705) and rever

文件：57.95 Kbytes 页数：2 Pages

MICROSEMI

美高森美

TRANSIENT VOLTAGE SUPPRESOR

Features • Passivated mesa structure for very low leakage currents • Hermetically sealed, low profile ceramic surface mount power package • Low package inductance • 5000 Watts peak power • Very low thermal resistance • Available as standard polarity (strap-to-anode) and reverse “R” polar

文件：60.06 Kbytes 页数：2 Pages

MICROSEMI

美高森美

TRANSIENT VOLTAGE SUPPRESOR

Features • Passivated mesa structure for very low leakage currents • Hermetically sealed, low profile ceramic surface mount power package • Low package inductance • 5000 Watts peak power • Very low thermal resistance • Available as standard polarity (strap-to-anode) and reverse “R” polar

文件：60.06 Kbytes 页数：2 Pages

MICROSEMI

美高森美

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED

文件：37.04 Kbytes 页数：2 Pages

CDI-DIODE

1 Amp Schottky Barrier Rectifiers

DESCRIPTION This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-41 glass package. FEATURES • JEDEC

文件：434.94 Kbytes 页数：6 Pages

MICROSEMI

美高森美

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED

文件：37.04 Kbytes 页数：2 Pages

CDI-DIODE

1 Amp Schottky Barrier Rectifiers

DESCRIPTION This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-41 glass package. FEATURES • JEDEC

文件：434.94 Kbytes 页数：6 Pages

MICROSEMI

美高森美