1N5818W数据表ic资料批发供应芯派科技第4页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5818	文件：131.41 Kbytes Page：2 Pages	Schottkybarrierrectifiersdiodes	SemikronSemikron 赛米控	Semikron
1N5818	文件：394.05 Kbytes Page：5 Pages	SchottkyBarrierRectifiers	VishayVishay Siliconix 威世科技	Vishay
1N5818	文件：47.27 Kbytes Page：4 Pages	1.0ASCHOTTKYBARRIERDIODE	WTEWon-Top Electronics 毅星電子毅星电子股份有限公司	WTE
1N5818	文件：338 Kbytes Page：2 Pages	CURRENT1.0AmpereVOLTAGE20to40Volts Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi	DAESAN Daesan Electronics Corp.	DAESAN
1N5818	文件：34.43 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin	HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司	HY
1N5818	文件：52.64 Kbytes Page：2 Pages	1.0AMP.SCHOTTKYBARRIERRECTIFIERS VoltageRange20to40VoltsCurrent1.0Amperes Features Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability	YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司	YANGJIE
1N5818	文件：39.63 Kbytes Page：1 Pages	SCHOTTKYBARRIERRECTIFIER VOLTAGE：20-40VCURRENT：1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability	CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司	CHONGQING
1N5818	文件：58.14 Kbytes Page：2 Pages	SchottkyBarrierRectifiers	DiotecDIOTEC 德欧泰克	Diotec
1N5818	文件：60.98 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
1N5818	文件：64.959 Kbytes Page：2 Pages	1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability *Epitaxialconstruction	UNIOHMUniohm 台湾厚声	UNIOHM
1N5818	文件：134.55 Kbytes Page：3 Pages	SchottkyBarrierRectifier	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
1N5818	文件：120.75 Kbytes Page：2 Pages	1.0AMP.SchottkyBarrierRectifier VOLTAGE:20TO40VCURRENT:1.0A SpecificationFeatures: ▪Case:Epoxy,Molded ▪Weight:0.4Gram(Approximately) ▪Highcurrentcapability,Lowforwardvoltagedrop ▪Highsurgecurrentcapability ▪Finish:AllExternalSurfacesCorrosionResistantAndTerminalLeadsAre ReadilySolderab	TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司	TAK_CHEONG
1N5818	文件：235 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N5818	文件：657.86 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre	DIOTECH Diotech Company.	DIOTECH
1N5818	文件：172.75 Kbytes Page：3 Pages	SchottkyBarrierRectifierDiodes Features ●ForSurfaceMountedApplications ●MetalSiliconJunction,MajorityCarrierConduction ●LowPowerLoss,HighEfficiency ●HighForwardSurgeCurrentCapability	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
1N5818	文件：184.21 Kbytes Page：4 Pages	1ASchottkyBarrierRectifiers Features •Guardringforovervoltageprotection •Metaltosiliconjunction,majoritycarrierconduction •Verysmallconductionlosses •Extremelyfastswitching •Highcurrentcapability,lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters	TAITRON TAITRON	TAITRON
1N5818	文件：190.87 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS Features •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola	SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司	SEMTECH_ELEC
1N5818	文件：157.09 Kbytes Page：2 Pages	SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand	SILANSilan 士兰	SILAN
1N5818	文件：27.56 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: Highcurrentcapability Highsurgecurrentcapability Highreliability Highefficiency Lowpowerloss Lowcost *Lowforwardvoltagedrop	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5818	文件：213.28 Kbytes Page：2 Pages	SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand	MOSPEC MOSPEC	MOSPEC

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详细参数

型号：
1N5818W
制造商：
EIC
制造商全称：
EIC discrete Semiconductors
功能描述：
SCHOTTKY BARRIER DIODES

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	1N5818W	CJ/长电	22+	SOD-123	6452	只做原装正品现货!或订货假一赔十!	询价
深圳市亿联芯电子科技有限公司	1N5818W	CJ/长电	2023+	SOD-123	9865	100%原厂代理库存,正品全新现货	询价
深圳市航润创能电子集团有限公司	1N5818W	CJ	21+	SOD-123	320	原装现货假一赔十	询价
深圳市振芯物联科技有限公司	1N5818W	CJ	22+	SOD-123	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	1N5818W	JINGDAO/晶导微	23+	SOD-123FL	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	1N5818W	JINGDAO/晶导微	2022	SOD-123FL	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市宏桥达半导体有限公司	1N5818W	JINGDAO/晶导微	22+	SOD-123FL	50000	原厂渠道/找正品元器件就找宏桥达/实报实货/诚信第一/	询价
北京三盛恒业电子有限公司	1N5818W	晶导微电子	22+	N/A	2500	进口原装,优势现货	询价
北京天阳诚业科贸有限公司	1N5818W	晶导微电子	23+	NA	200	二极管	询价
北京京北通宇电子元件有限公司	1N5818W	晶导微电子	23+	NA	9	现货!就到京北通宇商城	询价

更多1N5818W供应商更新时间2024-5-13 17:02:00

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