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1N1206A

Silicon Standard Recovery Diode

文件:773.58 Kbytes 页数:3 Pages

GENESIC

1N1206A

Silicon-Power-Rectifiers

文件:128.289 Kbytes 页数:2 Pages

DIOTEC

德欧泰克

1N1206AR

Silicon Standard Recovery Diode

文件:773.58 Kbytes 页数:3 Pages

GENESIC

1N1206RA

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes 页数:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1N1273

GERMAIUM PNP MESA TRANSISTORS

文件:1.13939 Mbytes 页数:2 Pages

AMMSEMI

1N1200A

Standard Rectifier (trr more than 500ns)

12A,100V-1200V standard recovery rectifier in DO-4 package.

Microchip

微芯科技

1N1200C

Rectifier Diode Switching 2-Pin 100V, 12A DO-4 Tray

Glass passivated die. \nLow forward voltage.\nGlass to Metal Seal Construction.\n250A Amps surge rating.\nVRRM to 1200 Volts. \nLow cost Non-RoHS package.;

Microchip

微芯科技

1N1200R

Diode and Rectifier Devices

12A,100V-1200V standard recovery rectifier in DO-4 package.

Microchip

微芯科技

1N1200A

包装:散装 类别:分立半导体产品 二极管 - 整流器 - 单 描述:STANDARD RECTIFIER

MICROCHIP

微芯科技

1N1200A

Package:DO-203AA,DO-4,接线柱;包装:管件 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

GeneSiC Semiconductor

技术参数

  • Peak Reverse Repetitive Voltage:

    400V

  • Peak Reverse Current:

    1500uA

  • Peak Non-Repetitive Surge Current:

    240A

  • Peak Forward Voltage:

    1.35V

  • Minimum Operating Temperature:

    -65°C

  • Maximum Operating Temperature:

    200°C

  • Maximum Continuous Forward Current:

    12A

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
IR
25+
6
询价
IR
22+
螺丝
8000
原装正品支持实单
询价
VISHAY
2022+
DO-203AA(DO-4)
1500
长期供应,价格优势,全新原装,支持实单,
询价
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单
询价
IR
23+
MODULE
8000
只做原装现货
询价
IR
23+
MODULE
7000
询价
Solid State System
26+
DO-4
16000
原装认证库存更多原厂可发
询价
INTERNATIONAL RECTIFIER
25+
TSSOP-14
8000
原厂原包装,终端BOM表可配单
询价
VISHAY SEMICONDUCTOR ITALIANA
26+
16800
原装现货
询价
更多1N12供应商 更新时间2026-10-24 22:52:00