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1N120

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件:2.79285 Mbytes 页数:78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1N1200

SILICON POWER RECTIFIER

SILICON POWER RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件:278.66 Kbytes 页数:2 Pages

DIGITRON

1N1200A

DO4 STUD DEVICES STANDARD RECTIFIER

Features • High Surge Capability • Types up to 1000 V VRRM

文件:419.32 Kbytes 页数:2 Pages

AMERICASEMI

1N1200A

12 AMP MEDIUM POWER SILICON RECTIFIER DIODES

Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260

文件:103.56 Kbytes 页数:4 Pages

IRF

1N1200A

Silicon Standard Recovery Diode

Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive

文件:741.43 Kbytes 页数:3 Pages

GENESIC

1N1200A

Medium Power Silicon Rectifier Diodes, 12 A

FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件:140.12 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

1N1200A

Silicon-Power Rectifiers

Silicon-Power Rectifiers Nominal current – Nennstrom 12 A Repetitive peak reverse voltage 50 1000 V Weight approx. – Gewicht ca. 5.5 g Recommended mounting torque 18 ± 10 lb.in. Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R)

文件:154.83 Kbytes 页数:2 Pages

DIOTEC

德欧泰克

1N1200AR

DO4 STUD DEVICES STANDARD RECTIFIER

Features • High Surge Capability • Types up to 1000 V VRRM

文件:419.32 Kbytes 页数:2 Pages

AMERICASEMI

1N1200C

SILICON POWER RECTIFIER

Silicon Power Rectifier • Glass Passivated Die • Low Forward Voltage • 400A Surge Rating • Glass to metal seal construction • VRRM to 1600V • Excellent reliability

文件:137.95 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N1201

Si Rectifier

Description: Si Rectifier, 10A

文件:99.73 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

技术参数

  • Peak Reverse Repetitive Voltage:

    400V

  • Peak Reverse Current:

    1500uA

  • Peak Non-Repetitive Surge Current:

    240A

  • Peak Forward Voltage:

    1.35V

  • Minimum Operating Temperature:

    -65°C

  • Maximum Operating Temperature:

    200°C

  • Maximum Continuous Forward Current:

    12A

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
IR
25+
6
询价
IR
22+
螺丝
8000
原装正品支持实单
询价
VISHAY
2022+
DO-203AA(DO-4)
1500
长期供应,价格优势,全新原装,支持实单,
询价
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单
询价
IR
23+
MODULE
8000
只做原装现货
询价
IR
23+
MODULE
7000
询价
Solid State System
26+
DO-4
16000
原装认证库存更多原厂可发
询价
INTERNATIONAL RECTIFIER
25+
TSSOP-14
8000
原厂原包装,终端BOM表可配单
询价
VISHAY SEMICONDUCTOR ITALIANA
26+
16800
原装现货
询价
更多1N12供应商 更新时间2026-10-23 9:04:00