丝印：1M；Package：SOT-416；NPN general purpose transistors

DESCRIPTION NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data proce

文件：46.98 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：1M；Package：SOT-416；65 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ General-purpose transistors ■ SMD plastic packages ■ Two different gain selections Applications ■ General-purpose switching and amplification

文件：404.87 Kbytes 页数：14 Pages

恩XP

丝印：1M；Package：SC-70；30 V, 100 mA NPN general-purpose transistors

Features * General-purpose transistors * SMD plastic packages

文件：2.00921 Mbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1M；Package：SOT143B；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1M；Package：X2-DSN0603-2；LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±18kV, Contact ±16kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications re

文件：349.88 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：1M；Package：SOD-123FL；STANDARD RECTIFIER

Features · For surface mounted applications · Glass passivated junction · Low profile package · Ideal for automated placement · High temperature soldering guaranteed: 260℃/10 seconds, at terminals

文件：481.16 Kbytes 页数：2 Pages

DAESAN

丝印：1M；Package：SOT-23；Darlington Amplifier Transistor

Darlington Amplifier Transistor

文件：52.92 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：1M；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：1M；Package：SOT-23；DarlingtonAmplifier Transistors

Darlington Amplifier Transistors ​​​​​​​ ● We declare that the material of product compliance with RoHS requirements.

文件：339.82 Kbytes 页数：8 Pages

FS

丝印：1M；Package：SOT-23；NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05.

文件：605.7 Kbytes 页数：13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司