PBSS5250X

Marking：1M；Package：SOT89；50 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES ·SOT89(SC-62)package ·Lowcollector-emittersaturationvoltageVCEsat ·Highcollectorcurrentcapability:ICandICM ·Higherefficiencyleadingtolessheatgeneration ·Reducedprinted-circuitboardrequirements. APPLICATIONS ·Powermanagement –DC/DCconverters –Suppl

PMBTA13

Marking：1M；Package：SOT23；NPN Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.30V) •HighDCcurrentgain(min.10000). APPLICATIONS •Highinputimpedancepreamplifiers. DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage.PNPcomplement:PMBTA64.

PMEG3002EJ

Marking：1M；Package：SOD323F；200 mA low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD323F(SC-90)smalland flatleadSurface-MountedDevice(SMD)plasticpackage. 1.2Features nAverageforwardcurre

S1MFL

Marking：1M；Package：SOD-123F；Surface Mount General Purpose Rectifiers

Features UltraThinProfile−MaximumHeightof1.08mm ULFlammability94V−0Classification MSL1 GreenMoldCompound NRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable TheseDevicesareP

KST13

Marking：1M；Package：SOT-23；Darlington Amplifier Transistor

NRVS1MFL

Marking：1M；Package：SOD-123F；Surface Mount General Purpose Rectifiers

PMDPB70EN

Marking：1M；Package：DFN2020-6；30 V, dual N-channel Trench MOSFET

PMPB13XNE

Marking：1M；Package：DFN2020MD-6；30 V, single N-channel Trench MOSFET

S1MFL

Marking：1M；Package：SOD-123F；Surface Mount General Purpose Rectifiers

SM1M

Marking：1M；SURFACE MOUNT GLASS PASSIVATED RECTIFIERS