丝印：1H6；Package：SM8；SN74AXC2T45 2-Bit Translating Transceiver with Configurable Level-Shifting

文件：1.21995 Mbytes 页数：35 Pages

TI

德州仪器

丝印：1H630L；Package：SOT1210；N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and benefits • Optimized

文件：303.89 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1H6D；Package：SOT-23；Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：1.07395 Mbytes 页数：26 Pages

TI

德州仪器

丝印：1H6D；Package：SOT-23；REF34xx Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：2.46263 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1H6D；Package：SOT-23；Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：1.05594 Mbytes 页数：26 Pages

TI

德州仪器

丝印：1H6D；Package：SOT-23；REF34xx Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：2.42046 Mbytes 页数：31 Pages

TI

德州仪器

丝印：1H6D；Package：SOT-23；REF34xx Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：2.41474 Mbytes 页数：31 Pages

TI

德州仪器

丝印：MDD1H6；Package：R-1；HIGH EFFICIENCY RECTIFIERS

文件：505.19 Kbytes 页数：2 Pages

CHENDA

辰达半导体

HIGH EFFICIENCY RECTIFIER

FEATURES Diffused junction Low forward voltage drop High current capability High reliability High surge current capability

文件：464.74 Kbytes 页数：2 Pages

SAMYANG

三阳电子

HIGH EFFICIENCY RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ High speed switching for high efficiency ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

文件：535.49 Kbytes 页数：2 Pages

CHENDA

辰达半导体