丝印：1H830L；Package：SOT1210；N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications. 2. Features and benefi

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