PSMN1R8-30MLH中文资料安世数据手册PDF规格书-114ic电子网

PSMN1R8-30MLH中文资料安世数据手册PDF规格书

厂商型号	PSMN1R8-30MLH
功能描述	N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
文件大小	304.43 Kbytes
页面数量	12 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2024-9-21 23:00:00

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A

and optimizedwith low gate resistance (RG) for fast-switching applications.

2. Features and benefits

• Optimized for low RDSon and low gate resistance (RG)

• Fast switching – reduced switching losses

• Strong linear-mode (SOA) rating

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• 150 A continuous ID(max) rating

• High reliability copper-clip bonded and solder die attach LFPAK33 package

• Qualified to 175 °C

• Exposed leads for optimal visual solder inspection

3. Applications

• Synchronous buck regulator

• Synchronous rectifier in AC-DC and DC-DC applications

• BLDC (brushless) motor control

• eFuse and battery protection