PSMN1R8-30MLH中文资料安世数据手册PDF规格书

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A

and optimizedwith low gate resistance (RG) for fast-switching applications.

2. Features and benefits

• Optimized for low RDSon and low gate resistance (RG)

• Fast switching – reduced switching losses

• Strong linear-mode (SOA) rating

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• 150 A continuous ID(max) rating

• High reliability copper-clip bonded and solder die attach LFPAK33 package

• Qualified to 175 °C

• Exposed leads for optimal visual solder inspection

3. Applications

• Synchronous buck regulator

• Synchronous rectifier in AC-DC and DC-DC applications

• BLDC (brushless) motor control

• eFuse and battery protection