丝印：1H630L；Package：SOT1210；N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and benefits • Optimized

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Discrete and MOSFET components, analog & logic ICs

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N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. • Optimized for low RDSon\n• Low spiking and ringing for low EMI designs\n• 160 A rated\n• Qualified to 175 °C\n• Exposed leads for optimal visual solder inspection;

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isc N-Channel MOSFET Transistor

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