PSMN1R6-30MLH中文资料安世数据手册PDF规格书

厂商型号	PSMN1R6-30MLH
功能描述	N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
丝印标识	1H630L
封装外壳	SOT1210
文件大小	303.89 Kbytes
页面数量	12 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-30 20:55:00
人工找货	PSMN1R6-30MLH价格和库存，欢迎联系客服免费人工找货

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A

and optimized for DC load switch and hot-swap applications.

2. Features and benefits

• Optimized for low RDSon

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• 160 A rated

• High reliability copper-clip bonded and solder die attach LFPAK33 package

• Qualified to 175 °C

• Exposed leads for optimal visual solder inspection

3. Applications

• DC switch / load switch

• USB-PD and fast-charge

• Battery protection

• OR-ing and hot-swap

• Synchronous rectifier in AC-DC and DC-DC applications

• Brushed and BLDC (brushless) motor control