丝印：1EDN7116U；Package：PG-TSNP-7-11；200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

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200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

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适用于 GaN SG HEMT 和 MOSFET 的 200 V 高侧 TDI 栅极驱动器 IC

\n优势:\n• High side driving and low side ground bounce immunity during fast switching transitions\n• Optimized switching speed without external gate resistors, by choosing from the family of 1EDN71x6x drivers \n• Induced turn-on immunity during fast switching transitions\n• Regulated bootstrap voltag;

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：INT. POWERSTAGE/DRIVER PG-VSON-1

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