丝印：1EDN7126U；Package：PG-TSNP-7-11；200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

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200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

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适用于 GaN SG HEMT 和 MOSFET 的 200 V 高侧 TDI 栅极驱动器 IC

\n优势:\n• High side driving and low side ground bounce immunity during fast switching transitions\n• Optimized switching speed without external gate resistors, by choosing from the family of 1EDN71x6x drivers\n• Induced turn-on immunity during fast switching transitions\n• Regulated bootstrap voltage;

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：INT. POWERSTAGE/DRIVER PG-VSON-1

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