丝印：1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Dual Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • Wettable Flank Pl

文件：423.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N06；Package：TDFN9；MOSFET - Power, Single N-Channel, Source-Down TDFN9 60 V, 1.3 m, 243 A

文件：351.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK8；Power MOSFET 40 V, 1.3 m, 235 A, Single N?묬hannel

文件：346.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK；MOSFET ??Power, Single, N-Channel 40 V, 1.15 m, 252 A

文件：347.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D36；Package：VSSOP；Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail Input/Output, Operational Amplifiers

文件：2.52384 Mbytes 页数：37 Pages

TI

德州仪器

丝印：1D36；Package：VSSOP；Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

文件：2.84025 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1D36；Package：VSSOP；OPAx388 Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

文件：2.87753 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1D36；Package：VSSOP；Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail Input/Output, Operational Amplifiers

文件：2.66304 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1D36；Package：VSSOP；Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail Input/Output, Operational Amplifiers

文件：2.66304 Mbytes 页数：39 Pages

TI

德州仪器