V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 页数：2 Pages

ALTECH

V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 页数：2 Pages

ALTECH

V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 页数：2 Pages

ALTECH

丝印：1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices ar

文件：325.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：148.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Dual Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • Wettable Flank Pl

文件：423.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D36；Package：VSSOP(DGK)；OPAx388 Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

1 Features • Ultra-low offset voltage: ±0.25 μV • Zero drift: ±0.005 μV/°C • Zero crossover: 140-dB CMRR true RRIO • Low noise: 7.0 nV√Hz at 1 kHz • No 1/f noise: 140 nVPP (0.1 Hz to 10 Hz) • Fast settling: 2 μs (1 V to 0.01%) • Gain bandwidth: 10 MHz • Single supply: 2.5 V to 5.5 V •

文件：3.22787 Mbytes 页数：50 Pages

TI

德州仪器

丝印：1D36；Package：VSSOP(DGK)；OPAx388 Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

1 Features • Ultra-low offset voltage: ±0.25 μV • Zero drift: ±0.005 μV/°C • Zero crossover: 140-dB CMRR true RRIO • Low noise: 7.0 nV√Hz at 1 kHz • No 1/f noise: 140 nVPP (0.1 Hz to 10 Hz) • Fast settling: 2 μs (1 V to 0.01%) • Gain bandwidth: 10 MHz • Single supply: 2.5 V to 5.5 V •

文件：3.22787 Mbytes 页数：50 Pages

TI

德州仪器