NVMJST1D2N04CTXG

Marking：1D24C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features •SmallFootprint(5x7mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TCPAK575x7TopCoolPackage •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJST1D6N04CTXG

Marking：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 314 A

Features •SmallFootprint(5x7mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TCPAK575x7TopCoolPackage •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMJST1D6N04CTXG

Marking：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 319 A

Features SmallFootprint(5x7mm)forCompactDesign LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses TCPAK575x7TopCoolPackage AEC−Q101QualifiedandPPAPCapable TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMTS1D0N04CLTXG

Marking：1D0N04CL；Package：TDFNW8；MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NewPower88Package •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMTS1D1N04CTXG

Marking：1D1N04C；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 1.1 m, 277 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NewPower88Package •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMTS1D6N10MCTXG

Marking：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NewPower88Package •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMTSC1D3N08M7TXG

Marking：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NewPower88DualCoolPackage •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant •WettableFlankPl

NVMYS1D2N04CLTWG

Marking：1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS1D6N04CLTWG

Marking：1D6N04CL；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.6 m, 185 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LFPAK4Package,IndustryStandard •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMYS1D7N04CTWG

Marking：1D7N04C；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LFPAK4Package,IndustryStandard •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant