NTMFS1D3N04XMT1G

Marking：1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

NTMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications •SynchronousRectification(SR)inDC−DCandAC−DC •Primary

NTTFS1D4N04XMTAG

Marking：1D4N4；Package：WDFN8；MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 1.43 m, 178 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(3.3x3.3mm)forCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •SynchronousRec

NTTFSS1D1N02P1E

Marking：1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features •AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Typ

NTTFSSCH1D3N04XL

Marking：1D3；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLos

NTTFSSH1D3N04XL

Marking：1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features •AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesar

NVBLS1D5N10MCTXG

Marking：1D5N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 m, 300 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVBLS1D7N08H

Marking：1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVBLS1D7N10MCTXG

Marking：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFWS1D1N04XMT1G

Marking：1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AECQ101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •MotorDrive •B