INA185A4IDRLT

Marking：1DZ；Package：SOT-5X3；INA185 26-V, 350-kHz, Bidirectional, High-Precision Current Sense Amplifier in Ultra- Small (SOT-563) Package

1Features •SC70andSOT-563packages –SC70offerscompatibilitytoexistingsolutions –SOT-563is39smallerfootprintthanSC70 –SOT-563dimensionsis1.6mm×1.6mm× 0.55mm •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±55

INA2181A2IDGSR

Marking：1DR6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181A2IDGST

Marking：1DR6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181A3IDGSR

Marking：1DS6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181A3IDGST

Marking：1DS6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181A4IDGSR

Marking：1DT6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA2181A4IDGST

Marking：1DT6；Package：VSSOP；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

NTBLS1D5N10MCTXG

Marking：1D5N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 m, 312 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NTBLS1D7N10MCTXG

Marking：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NTMFS1D1N04XMT1G

Marking：1D1N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing