NVMFWS1D3N04XMT1G

Marking：1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AECQ101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Ba

NVMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features LowQRR,SoftRecoveryBodyDiode LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses AECQualifiedandPPAPCapable TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications SynchronousRectification(

NVMJS1D0N04CTWG

Marking：1D0N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D2N04CLTWG

Marking：1D2N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D3N04CTWG

Marking：1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NVMJS1D4N06CLTWG

Marking：1D4N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D5N04CLTWG

Marking：1D5N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.4 m, 200 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D6N06CLTWG

Marking：1D6N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D7N04CTWG

Marking：1D7N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NVMJS1D7N06CTWG

Marking：1D7N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant