ICS1893BKILFT

Marking：1893BKILF；Package：MLF2；3.3-V 10Base-T/100Base-TX Integrated PHYceiver™

Features •Supportscategory5cableswithattenuationinexcessof 24dBat100MHz. •Single-chip,fullyintegratedPHYprovidesPCS,PMA,PMD, andAUTONEGsublayersfunctionsofIEEEstandard. •10Base-Tand100Base-TXIEEE8802.3compliant •Single3.3Vpowersupply •Highlyconfigurabl

ICS1893BKLF

Marking：1893BKLF；Package：MLF2；3.3-V 10Base-T/100Base-TX Integrated PHYceiver™

Features •Supportscategory5cableswithattenuationinexcessof 24dBat100MHz. •Single-chip,fullyintegratedPHYprovidesPCS,PMA,PMD, andAUTONEGsublayersfunctionsofIEEEstandard. •10Base-Tand100Base-TXIEEE8802.3compliant •Single3.3Vpowersupply •Highlyconfigurabl

ICS1893BKLFT

Marking：1893BKLF；Package：MLF2；3.3-V 10Base-T/100Base-TX Integrated PHYceiver™

Features •Supportscategory5cableswithattenuationinexcessof 24dBat100MHz. •Single-chip,fullyintegratedPHYprovidesPCS,PMA,PMD, andAUTONEGsublayersfunctionsofIEEEstandard. •10Base-Tand100Base-TXIEEE8802.3compliant •Single3.3Vpowersupply •Highlyconfigurabl

INA181A1IDBVR

Marking：18JD；Package：SOT-23；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

INA181A1IDBVT

Marking：18JD；Package：SOT-23；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) –

IPD18DP10LM

Marking：18DP10LM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *Verylowon-resistanceRds(on)@Vgs=4.5V *100avalanchetested *Logiclevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

IPF018N10NM5LF2

Marking：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPI180N10N3G

Marking：180N10N；Package：PG-TO262-3；OptiMOSTM3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPM018N10NM5LF2

Marking：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •LowVgs(th)spread •Improvedcurrentsharing •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIE

IPP180N10N3G

Marking：180N10N；Package：PG-TO220-3；OptiMOSTM3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr