IPI180N10N3G芯片代码Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPI180N10N3G	文件：299.61 Kbytes Page：10 Pages	丝印：180N10N；Package：PG-TO262-3；OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：299.61 Kbytes 页数：10 Pages	INFINEON 英飞凌	INFINEON
IPP180N10N3G	文件：299.61 Kbytes Page：10 Pages	丝印：180N10N；Package：PG-TO220-3；OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：299.61 Kbytes 页数：10 Pages	INFINEON 英飞凌	INFINEON
180N10N	文件：299.61 Kbytes Page：10 Pages	OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：299.61 Kbytes 页数：10 Pages	INFINEON 英飞凌	INFINEON

更多180N10N供应商更新时间2026-1-20 11:16:00