5962R1822002PYE芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
5962R1822002PYE	文件：2.61896 Mbytes Page：51 Pages	丝印：1822002PYE；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages	TI 德州仪器	TI
5962R1822002PYE	文件：2.58479 Mbytes Page：51 Pages	丝印：1822002PYE；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.58479 Mbytes 页数：51 Pages	TI 德州仪器	TI

更多1822002PYE供应商更新时间2025-9-19 16:14:00