SL 3.50/05/90G 3.2SN BK BX

文件：333.47 Kbytes 页数：5 Pages

WEIDMULLER

魏德米勒

Base strip - MDSTBV 2,5/18-G1

文件：80.51 Kbytes 页数：4 Pages

PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

丝印：176XY；Package：DFN2510P10E；Ultra-Low Capacitance ESD Protection Array For High-Speed I/O Port

Features  ESD protection for super speed differential signaling (above 10Gb/s) channels  Protects four I/O lines  Provide transient protection for each line to IEC 61000-4-2 (ESD) ±15kV (air), ±14kV (contact) IEC 61000-4-4 (EFT) 30A (5/50ns) IEC 61000-4-5 (Lightning) 4A (8/20ms)  For l

文件：277.53 Kbytes 页数：8 Pages

AMAZING

晶焱科技

丝印：176J；Package：WSON；BQ25176J: 800-mA JEITA-Compliant Linear Battery Charger For 1-Cell Li-Ion and LiFePO4 With VINDPM

1 Features • Input voltage up to 30 V tolerant • Input Voltage Based Dynamic Power Management (VINDPM) • Automatic Sleep Mode for low power consumption – 350-nA battery leakage current – 80-μA input leakage current when charge disabled • Supports 1-cell Li-Ion, Li-Poly, and LiFePO4 • Exte

文件：2.00886 Mbytes 页数：34 Pages

TI

德州仪器

丝印：176K；Package：WSON(DSG)；BQ25176K: 800mA JEITA-Compliant Linear Battery Charger For 1-Cell Li-Ion and LiFePO4 With VINDPM and 4.5V Battery

1 Features • Input voltage up to 30V tolerant • Input Voltage Based Dynamic Power Management (VINDPM) • Automatic Sleep Mode for low power consumption – 350nA battery leakage current – 80μA input leakage current when charge disabled • Supports 1-cell Li-Ion, Li-Poly, and LiFePO4 • Externa

文件：2.0061 Mbytes 页数：33 Pages

TI

德州仪器

丝印：176M；Package：WSON；BQ25176M 0.8-A, 1-Cell, Linear Solar Charger With Battery Tracking VINDPM For Harvesting Applications

1 Features • Input voltage up to 30 V tolerant • Input Voltage Based Dynamic Power Management (VINDPM) tracking battery voltage • Automatic Sleep Mode for low power consumption – 350-nA battery leakage current – 80-μA input leakage current when charge disabled • Supports 1-cell Li-Ion, Li-

文件：2.14291 Mbytes 页数：32 Pages

TI

德州仪器

丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176MEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176AEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器

丝印：176AEP；Package：SOIC；DIFFERENTIAL BUS TRANSCEIVER

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C and −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† High-Speed Low-Power LinBiCMOS C

文件：525.57 Kbytes 页数：21 Pages

TI

德州仪器