Trench Mosfet

GOFORD

谷峰半导体

丝印：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ® Ros 10m0@VGS=10vV ® Super high density cell design for extremely low Ros) | ® Exceptional on-resistance and maximum DC current

文件：2.67918 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：539.92 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：615.27 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：651.25 Kbytes 页数：4 Pages

CET

华瑞