丝印：15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.34 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.82 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.66 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

文件：430.61 Kbytes 页数：3 Pages

LRC

乐山无线电

丝印：15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

文件：430.61 Kbytes 页数：3 Pages

LRC

乐山无线电

丝印：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RDS(ON), 100mΩ(Typ) @ VGS =4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed

文件：660.16 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.75984 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10B TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：3.21424 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.69049 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：15N50；Package：TO-220；15A 500V N-channel Enhancement Mode Power MOSFET

文件：1.54489 Mbytes 页数：12 Pages

WXDH

东海半导体