14A, 650V N-CHANNEL POWER MOSFET

FEATURES * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

文件：396.63 Kbytes 页数：9 Pages

UTC

友顺

14A, 650V N-CHANNEL POWER MOSFET

The UTC 14N65-TC are N-Channel enhancement modepower field effect transistors (MOSFET) which are producedusing UTC’s proprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performanc RDS(ON) < 0.7Ω @ VGS = 10V, ID = 7.0A Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness;

UTC

友顺

N-Channel 650-V (D-S) MOSFET

文件：308.59 Kbytes 页数：5 Pages

ANALOGPOWER

N-CHANNEL POWER MOSFET-S

文件：2.46445 Mbytes 页数：9 Pages

FOSTER

福斯特半导体

14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super

文件：308.02 Kbytes 页数：9 Pages

SILAN

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