P14N65FJD中文资料士兰微数据手册PDF规格书

DESCRIPTION

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses. It leads the

design engineers to their power converters with high efficiency, high

power density, and superior thermal behavior. Furthermore, it’s

universal applicable, i.e., suitable for hard and soft switching

topologies.

FEATURES

 14A,650V, RDS(on)(typ.)=0.26@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability