High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

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STMICROELECTRONICS

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NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

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友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 页数：4 Pages

UTC

友顺