HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

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STMICROELECTRONICS

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NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件：153.95 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件：153.95 Kbytes 页数：3 Pages

UTC

友顺