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型号	下载订购	功能描述	制造商上传企业	LOGO
13005BA	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAG-T92-B	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAG-T92-K	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAG-T92-R	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAL-T92-B	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAL-T92-K	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAL-T92-R	文件：155.86 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BA_15	文件：153.95 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTOR 文件：153.95 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAG-T92-A-B	文件：153.95 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTOR 文件：153.95 Kbytes 页数：3 Pages	UTC 友顺	UTC
13005BAG-T92-A-K	文件：153.95 Kbytes Page：3 Pages	NPN SILICON POWER TRANSISTOR 文件：153.95 Kbytes 页数：3 Pages	UTC 友顺	UTC

技术参数

BVceo (V)：
400
BVcbo (V)：
800
Ic (A)：
3
hFE (min)：
15
hFE (max)：
50
Vce (Max)(V)：
1
Vce (Sat)(V)：
0.5
Package：
TO-92

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	13005BD	P	23+	TO220	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市安富世纪电子有限公司	13005BD	P	23+	15+	6500	专注配单,只做原装进口现货	询价
深圳市拓亿芯电子有限公司	13005D	SF	25+	TO-220	15000	全新原装现货,价格优势	询价
深圳市威雅利发展有限公司	13005D	TR	1932+	TO-220	215	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市中联芯电子有限公司	13005D	CRMICRO/华润微	24+	TO-220	7800	全新原厂原装正品现货,低价出售,实单可谈	询价
深圳市科恒伟业电子有限公司	13005D	蓝箭	2450+	TO220	8850	只做原装正品假一赔十为客户做到零风险!!	询价
富凯科技(深圳）有限公司	13005ECL-E-TM3-T	UTC/友顺	24+	NA	8000	只做原装，欢迎询价，量大价优	询价
深圳市星宇佳科技有限公司	13005ED	N/A		TO-126	364		询价
深圳市河锋鑫科技有限公司	13005F	FAIRCHILD/仙童	TO-220F	22+	6000	十年配单,只做原装	询价
深圳市一线半导体有限公司	13005-H1	FSC	24+	DIP220	10000		询价

更多13005BA供应商更新时间2026-4-19 11:09:00

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