13003EDA

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION; · High collector-base breakdown voltage \n· Low reverse leakage current \n· High reliability;

The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003EDA is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light.

13003EDA

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

13003EDA_15

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

13003EDAG-T60-F-K

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

13003EDAG-T60-K

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

13003EDAG-T92-B

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

13003EDAG-T92-F-B

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

13003EDAG-T92-F-K

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

13003EDAG-T92-K

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

13003EDAG-TM3-T

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION