24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：124.82 Kbytes 页数：8 Pages

Fairchild

仙童半导体

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moder

文件：270.84 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：98.21 Kbytes 页数：7 Pages

Intersil

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o

文件：102.49 Kbytes 页数：7 Pages

HARRIS