G12N60C3D中文资料安森美半导体数据手册PDF规格书

The HGTG12N60C3D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a MOSFET

and the low on−state conduction loss of a bipolar transistor. The much

lower on−state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49123. The diode

used in anti parallel with the IGBT is the development type TA49061.

This IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses are

essential

Formerly Developmental Type TA49117.

特性 Features

• 24 A, 600 V at TC = 25°C

• Typical Fall Time 210 ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti−Parallel Diode

• This is a Pb−Free Device