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G12N60C3D

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HGTG12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

Harris Corporation

HGTG12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

HGTP12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

Intersil

Intersil Corporation

HGTP12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
进口原装
23+
TO-247
3000
全新原装
询价
FAIRCHILD
18+
TO-247
85600
保证进口原装可开17%增值税发票
询价
FAIRCHILD/仙童
22+
TO-220
6000
十年配单,只做原装
询价
哈理斯
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
FAIRCHILD/仙童
22+
TO-220
25000
只做原装进口现货,专注配单
询价
FAIRCHILD
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD/仙童
25+
TO247
7781
原装正品,假一罚十!
询价
IR
23+
TO220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
TO220
8000
只做原装现货
询价
IR
23+
TO220
7000
询价
更多G12N60C3D供应商 更新时间2025-5-19 16:12:00