12A, 650V N-CHANNEL POWER MOSFET

The UTC 12N65K-MT are N-Channel enhancement modepower field effect transistors (MOSFET) which are produced byusing UTC’s proprietary, planar stripe and DMOS technology.These devices are suited for high efficiency switch mode powersupply. To minimize on-state resistance, provide superior switchingper • RDS(ON) < 0.76Ω @VGS = 10 V\n• Avalanche energy specified\n• Improved dv/dt capability, high ruggedness;

UTC

友顺

N-CHANNEL JUNCTION FET

文件：206.84 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：2.41062 Mbytes 页数：8 Pages

SUNMATE

森美特

MOSFET 650V, 12A N-CHANNEL

FEATURE • RDS(ON),typ.=0.60 Ω@VGS=10V • High Current Rating • Lower Capacitance • Lower Total Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM12N65 is available in TO-220 and TO220F Packages. APPLICATIONS • Adaptor • Charger • SMPS Standby Power

文件：940.86 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

N-Channel 650-V (D-S) MOSFET

文件：326.92 Kbytes 页数：5 Pages

ANALOGPOWER