丝印：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400W peak pulse power (8/20 Low leakage: nA level Low operating voltage: 12V Ultra low clamping voltage One power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 80A (5/50ns)

文件：1.79309 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：12A；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400W peak pulse power (8/20 Low leakage: nA level Low operating voltage: 12V Ultra low clamping voltage One power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 80A (5/50ns)

文件：1.79324 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：12A；Package：SOT-23；Common Anode Zeners for ESD Protection

DESCRIPTION The dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and o

文件：546.82 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：12A；Package：DO-214AC；Transient Voltage Suppressors (TVS) Data Sheet

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ■ Fast response t

文件：1.5674 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：12A；Package：DO-214AC；6.8 To 600V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 10V 400W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：3.79742 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：12A；Transient Voltage Suppressors

Features • For surface mounted applications in order to optimize board space • Glass passivated junction • Built-in strain relief • Excellent clamping capability • Low profile package • Low inductance • Excellent clamping capability • Fast response time: typically less than 1.0 ps from 0 v

文件：2.13257 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：12A；Transient Voltage Suppressors

Glass Passivated Junction Transient Voltage Suppressor VOLTAGE-6.8 TO 550 Volts 400 Watt Peak Pulse Power Features • For surface mounted applications in order to optimize board space • Glass passivated junction • Built-in strain relief • Excellent clamping capability • Lo

文件：2.72233 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400W peak pulse power (8/20 Low leakage: nA level Low operating voltage: 12V Ultra low clamping voltage One power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 80A (5/50ns)

文件：1.79334 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：12A；Package：SOD-323；TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450 Watts peak pulse power per line(tp=8/20μs) Replacement for MLV (0805) Protects one power or I/O port Low clamping voltage Applied to the type 3V and 36V 61000-4-2 (ESD): Air 30kV, Contact 30kV

文件：395.8 Kbytes 页数：3 Pages

DAESAN