N-Channel 650 V (D-S) MOSFET

文件：1.85384 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体