N-Channel 650 V (D-S) MOSFET

文件：1.85385 Mbytes 页数：8 Pages

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微碧半导体

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

文件：1.8644 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：11N60C2；Package：P-TO263-3-2；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：11N60C2；Package：P-TO220-3-1；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

INFINEON

英飞凌

N-Channel 650 V (D-S) MOSFET

文件：1.8644 Mbytes 页数：8 Pages

VBSEMI

微碧半导体