丝印：11N；Package：SOT23LC；110V N-Channel Enhancement-Mode MOSFET VDS= 110V

文件：606.48 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：11N08NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.74239 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：11N1LF2；Package：PG-TSDSON-8；OptiMOSTM 5 Linear FET 2, 100 V

Features • Ideal for soft start in Power-over-Ethernet (PoE) application • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.35377 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：11N60C3；Package：PG-TO220FP；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

文件：683.7 Kbytes 页数：15 Pages

Infineon

英飞凌

丝印：11N60C3；Package：PG-TO220；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

文件：683.7 Kbytes 页数：15 Pages

Infineon

英飞凌