DC charging cable - EV-T2M4CC-DC80A-7,5M16ESBK11

文件：666.49 Kbytes 页数：11 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Isolating disk

文件：99.55 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

RENESAS MCU

文件：819.88 Kbytes 页数：102 Pages

RENESAS

瑞萨

Precision Rotative Transducers 360째 Special Laws: Sine/Cosine

文件：263.47 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Precision Rotative Transducers

文件：257.23 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：1165Q；Package：MSOP-8L；Ultra Low Capacitance ESD Protection Array For High Speed I/O Port

Features
ESD Protect for Super Speed Differential Signaling (above 5Gb/s) channels
Protects six I/O lines operating up to 3.3V and below
Protects one VDD line operating up to 5.0V and below
Provide ESD protection for each channel to IEC 61000-4-2 (ESD) ±15kV (air), ±10kV (contact)

文件：297.88 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI

德州仪器