丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With ±12-kV ESD Protection

1 Features • VID V62/19606 • Radiation hardened – Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS-free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled baseline – Gold wire – NiPdAu lead fini

文件：464.61 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With 짹12-kV ESD Protection

文件：899.69 Kbytes 页数：24 Pages

TI1

德州仪器

丝印：1168SEP；Package：TSSOP；SN65C1168E-SEP Dual Differential Drivers and Receivers With 짹12-kV ESD Protection

文件：899.69 Kbytes 页数：24 Pages

TI1

德州仪器