| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
10A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
N-ChannelUniFETTMIIMOSFET600V,10A,750m? Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET,FRFET600V,9A,0.8廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild?셲proprietary,planarstripe,DMOStechnology. Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelUniFETTMIIMOSFET600V,10A,750m? Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET,FRFET600V,9A,0.8廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,10AShortCircuitRatedIGBT GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,10AShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
AdvancedN-ChPowerMOSFET-G | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
FSC? |
2023+ |
TO-220? |
16800 |
芯为科技只有原装 |
询价 | ||
KODENSHIAUK |
17+ |
TO-220F |
65345 |
现货库存 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
VBsemi |
21+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VBsemi |
22+ |
TO220F |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
VBsemi |
21+ |
TO220F |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBSEMI/台湾微碧 |
20+ |
TO220F |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
VBsemi |
2213+ |
TO220F |
5467 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VBsemi |
2023+ |
TO220F |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 |
相关规格书
更多- 11229-12
- 1141LF
- 11596-21
- 1200P60
- 1251
- 12C508A
- 1330A
- 13B0141
- 1458
- 15218
- 16206550
- 16258256
- 16700
- 16CTQ100
- 17128DPC
- 17256EJC
- 1736DPC
- 1826-0109
- 18CV8PC-25
- 1H0165R
- 1N4002
- 1N4004
- 1N4148
- 1N4733A
- 1N4746A
- 1N4937RL
- 1N5401
- 1N5404
- 1N5408
- 1N5817RL
- 1N5819
- 1N5821
- 1N5822RL
- 1N914
- 1PS193
- 1SMB15AT3
- 1SMB5920BT3
- 1SMB6.0AT3
- 1SS181
- 1SS187
- 1SS193
- 1SS220
- 1SS250
- 1SS300
- 1SS302
