10A, 600V N-CHANNEL POWER MOSFET

The UTC 10N60K-MT is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and a highrugged avalanche characteristics. This power MOSFET is usuallyused at high speed switching applications in power s • RDS(ON) = 0.63Ω (Typ.) @VGS =10V\n• Low gate charge ( typical 33 nC)\n• Low Crss ( typical 18 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability;

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N-CHANNEL POWER MOSFET

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10A, 600V N-CHANNEL POWER MOSFET

The UTC 10N60K-MTQ is a high voltage power MOSFETdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and high ruggedavalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of switching power supplies a RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness;

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N-CHANNEL POWER MOSFET

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10A, 600V N-CHANNEL POWER MOSFET

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N-CHANNEL JUNCTION FET

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