10A, 600V N-CHANNEL POWER MOSFET

The UTC 10N60Z-Q is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in pow • RDS(ON) < 0.8Ω@VGS =10V\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability;

UTC

友顺

N-CHANNEL JUNCTION FET

文件：197.75 Kbytes 页数：6 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件：297.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S)Power MOSFET

文件：1.1059 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

600V,10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

文件：264.79 Kbytes 页数：6 Pages

AOSMD

万国半导体