Accessories - PTCM-MP-PI 0,14-0,5 R

文件：49.21 Kbytes 页数：1 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Accessories - PTCM-MP-PI 0,34-0,75

文件：49.17 Kbytes 页数：1 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Accessories - PTCM-MP-PI 0,14-0,5

文件：48.92 Kbytes 页数：1 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Pulse Transformers

文件：109.19 Kbytes 页数：2 Pages

MuRata

村田

2-pack-integrated intelligent Power System

文件：96.82 Kbytes 页数：2 Pages

Semikron

赛米控丹佛斯

2-pack-integrated

文件：78.51 Kbytes 页数：3 Pages

Semikron

赛米控丹佛斯

丝印：1013O；Package：SOT-89；PNP Transistors

■ Features ● High voltage ● Large continuous collector current capability

文件：379.92 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：1013R；Package：SOT-89；PNP Transistors

■ Features ● High voltage ● Large continuous collector current capability

文件：379.92 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：1013Y；Package：SOT-89；PNP Transistors

■ Features ● High voltage ● Large continuous collector current capability

文件：379.92 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：1013EX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = -20V,ID =-0.66A RDS(ON

文件：286.26 Kbytes 页数：7 Pages

NCEPOWER

新洁能