Low Power Quint Exclusive OR/NOR Gate

文件：138.97 Kbytes 页数：7 Pages

TI

德州仪器

Low Power Quint Exclusive OR/NOR Gate

文件：123.03 Kbytes 页数：8 Pages

NSC

国半

Low Power Quint Exclusive OR/NOR Gate

文件：123.03 Kbytes 页数：8 Pages

NSC

国半

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：150.96 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits • High thermal power dissipation capability • Suitabl

文件：280.2 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-C

文件：283.28 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：10030PK；Package：SOT1205；PNP/PNP high power double bipolar transistor

1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits • High thermal power dissipation capability • Suitab

文件：727.83 Kbytes 页数：15 Pages

NEXPERIA

安世

Low Power Triple 5-Input OR/NOR Gate

ONSEMI

安森美半导体

Low Power Triple 5-Input OR/NOR Gate

TI

德州仪器

Low Power Quint 2-Input OR/NOR Gate

ONSEMI

安森美半导体