SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

SMD Power Inductor

文件：315.73 Kbytes 页数：5 Pages

SUMIDA

胜美达

丝印：0415NAB；Package：LFPAK56；40 V, 15 A NPN high power bipolar transistor

General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit

文件：274.41 Kbytes 页数：13 Pages

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丝印：0415NAB；Package：SOT669；40 V, 15 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：285.68 Kbytes 页数：14 Pages

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安世

丝印：0415PAB；Package：LFPAK56；40 V, 15 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printe

文件：272.73 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：0415PAB；Package：SOT669；40 V, 15 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：284.64 Kbytes 页数：14 Pages

NEXPERIA

安世