丝印：041N12N；Package：PG-TO262-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：878.72 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：041N12N；Package：PG-TO220-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：878.72 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：719.31 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：284.7 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Red

文件：730.92 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：295.62 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0415NAB；Package：LFPAK56；40 V, 15 A NPN high power bipolar transistor

General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit

文件：274.41 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：0415NAB；Package：SOT669；40 V, 15 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：285.68 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0415PAB；Package：LFPAK56；40 V, 15 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printe

文件：272.73 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：0415PAB；Package：SOT669；40 V, 15 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：284.64 Kbytes 页数：14 Pages

NEXPERIA

安世