丝印：020N04TB；Package：TO-263；MOSFET

Features - Super low RDS(on) and gate charge. - AEC-Q101 Qualified. - Advanced shielded-gate technology. - Green device available.

文件：530.66 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：020N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：685.38 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：020N03MS；Package：PG-TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications

文件：386.66 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：020N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 PowerTransistor, 30 V

Features • Optimized for wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：946.92 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：020N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：835.67 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：020N10N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.029609 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N13N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：948.78 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.37681 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.26267 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：281.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体